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Full text of “IC Datasheet: EPROM” Jameco Part Number M NMOS Kbit (32Kb x 8) UV EPROM NOT FOR NEW DESIGN □ FAST. datasheet, pdf, data sheet, datasheet, data sheet, pdf, General NMOS K 32K x 8 UV EPROM Others with the same file for datasheet. (EPROM). The device is organized as 32K words by 8 bits (32K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin.

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Assuming that the addresses are stable, address access time tflivov is equal to the delay from E to output tELOv.

Eatasheet Verify A verify should be performed on the programmed bits to determine that they were correctly pro- grammed. The purpose of the bulk capacitor is to overcome the voltage drop caused by the inductive effects of RGB traces.

Although only eprm will be programmed, both “1 s” and “Os” can be present in the data word. The levels required forthe address and data inputs are TTL. Program Inhibit Programming of multiple Ms in parallel with different data is also easily accojnplished. Data is introduced by selectively programming “Os” into the desired bit locations. The only way to change a “0” to a “1 ” is by ultraviolet light erasure.

27256 – 27256 256K EPROM Datasheet

The Fast Programming Algorithm utilizes two different pulse types: These are stress ratings oniy and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. This publication supersedes and replaces all information previously dataeheet. It is organized as STIVIicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroeiectronics.


The duration of the initial E pulse s is 1 ms, which will then be followed by a longer over- program pulse of length 3ms by n n is equal to the number of the initial one millisecond pulses applied Table 3. If the M is to be exposed to these types of lighting conditions for extended periods of time, it is suggested that opaque lables be put over the M datazheet to prevent unintentional erasure. The bulk capacitor should be located near the power supply connection point.

In addition, a 4.

Up to 25 one-millisecond pulses per byte are provided for before the over program pulse is applied. Two Line Output Control Because EPROMs are usually used in larger mem- ory arrays, this product features a 2 line datasyeet function which accommodates the use of multiple memory connection.

Research shows that constant exposure to room level fluorescent lighting could erase a typical M in about 3 vatasheet, while it would take approximately 1 week to cause erasure when exposed to direct sunlight.

Programming reliability is also ensured as the incremental program margin of each byte is continually monitored to determine when it has been successfully programmed. The integrated dose i. Two identifier bytes may then be sequenced from the device datasyeet by toggling address line AO from Vil to Vih. When parallel programming several devices which share the common bus, Vpp should be lowered to Vcc 6V and the normal read mode used to dafasheet cute a program verify.

The data to be pro- grammed is applied 8 bits daatsheet parallel to the data output pins. Standby Mode The M has a standby mode which reduces the maximum active power current from mA to 40mA. The magnitude of the transient current peaks is dependent on the capacitive and inductive loading of the device at the output. Specifications mentioned in this publication are subject to change without notice.


eprom datasheet & applicatoin notes – Datasheet Archive

For the STMi- croelectronics M, these two identifier bytes are given below. To activate this mode, the programming equipment must force Datasheer is recommended that a 1 j.

Some lamps have a filter on their tubes which should be re- moved before erasure. A high level E input inhibits the other Ms from being programmed. The associated transient voltage peaks can be sup- pressed by complying with the two line output control and by properly selected decoupling ca- pacitors.

This ensures that all deselected memory devices are in their low power standby mode and that the output pins are only active when data is required from a particular memory device.

Except for E, all like inputs including G of the parallel M may be common. The M should be placed within 2. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern.

A new pattern can then be written to the device by following the pro- gramming procedure. This mode is intended for use by programming equipment for the purpose of automatically matching the device to be programmed with its corresponding programming algorithm. Output Enable G is the output control and should be used to gate data to the output pins, inde- pendent of device selection. Full text of ” IC Datasheet: